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Transistor BJT Characteristics Apparatus

Transistor BJT Characteristics Apparatus

Transistor BJT Characteristics Apparatus

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Model No: AGN-EI-312
Complete apparatus with regulated power supply for studying the characteristics of Bipolar Junction Transistors (BJT) in both common emitter (CE) and common base (CB) configurations. Ideal for measuring input/output characteristics, current gain, and voltage gain.
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Technical Specifications

Model No.

Types

AGN-EI-312

Transistor / BJT Characteristics Apparatus with Regulated Power Supply

AGN-EI-312A

Transistor / BJT Characteristics Apparatus (CE PNP)

AGN-EI-312B

Transistor / BJT Characteristics Apparatus (CE NPN)

AGN-EI-312C

Transistor / BJT Characteristics Apparatus (CB PNP)

AGN-EI-312D

Transistor / BJT Characteristics Apparatus (CB NPN)

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